HEXFET Power MOSFET

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：282.49 Kbytes 页数：12 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：194.73 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：282.49 Kbytes 页数：12 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：194.73 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=16A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.17Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.44 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：282.49 Kbytes 页数：12 Pages

IRF