Advanced Power MOSFET (200V, 0.18ohm, 12.8A)

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Lower RDS(ON) : 0.144 Ω(Typ.)

文件：261.85 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area

文件：64.66 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET (200V, 0.18ohm, 12.8A)

ONSEMI

安森美半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：684.36 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

文件：14.29 Kbytes 页数：2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

文件：758.82 Kbytes 页数：3 Pages

SEME-LAB