Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)

Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current

文件：190.95 Kbytes 页数：11 Pages

IRF

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：188.98 Kbytes 页数：2 Pages

ISC

无锡固电

THINKI 40A,200V Matured Planar N-Channel Power MOSFETs

Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

文件：1.6825 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A )

Applications High Frequency DC-DC converters Lead-Free
 Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design,
Fully Characterized Avalanche Voltage and Current

文件：295.33 Kbytes 页数：12 Pages

IRF

High Frequency DC-DC converters

文件：296.29 Kbytes 页数：12 Pages

IRF

High Frequency DC-DC converters

文件：296.29 Kbytes 页数：12 Pages

IRF

采用 D2-Pak 封装的 200V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 具备完全特性化的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 具备完全特性化的的电容，包括有效的Coss以简化设计;

Infineon

英飞凌