Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

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Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)

文件：141.22 Kbytes 页数：10 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -13A@ TC=25℃ · Drain Source Voltage -VDSS= -150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.295Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter

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ISC

无锡固电

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：246.37 Kbytes 页数：11 Pages

IRF