Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)

文件：116.78 Kbytes 页数：10 Pages

IRF

Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)

文件：116.78 Kbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件：832.21 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

文件：3.34658 Mbytes 页数：7 Pages

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