首页 >IRFRC20TRR>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFRC20TRR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:1.82401 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFRC20TRR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:4.33972 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:4.34026 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:4.33972 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:1.82401 Mbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:4.34026 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件:4.33972 Mbytes 页数:7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET 文件:1.13808 Mbytes 页数:13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件:1.13808 Mbytes 页数:13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号:
IRFRC20TRR
- 功能描述:
MOSFET N-Chan 600V 2.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERNATIONA |
06+ |
原厂原装 |
6216 |
只做全新原装真实现货供应 |
询价 | ||
IR |
24+ |
TO-252 |
36800 |
询价 | |||
VISHAY |
25+ |
TO-252 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VB |
25+ |
DPAK(TO- |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
23+ |
TO-252 |
46000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Vishay Siliconix |
2022+ |
TO-252-3,DPak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
VB |
23+ |
DPAK(TO- |
8000 |
只做原装现货 |
询价 | ||
VB |
23+ |
DPAK(TO- |
7000 |
询价 | |||
K |
26+ |
DPAK(TO- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
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