4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The str

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR220, SiHFR220) • Straight lead (IRFU220, SiHFU220) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

文件：816.14 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：3.96242 Mbytes 页数：7 Pages

KERSEMI

N-Channel MOSFET uses advanced trench technology

文件：1.42322 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

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ISC

无锡固电

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR220, SiHFR220);

Vishay

威世

4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs

Renesas

瑞萨

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR220, SiHFR220) • Straight lead (IRFU220, SiHFU220) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

文件：816.14 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V ■ Low RDS(ON) : 0.626 Ω (Typ.)

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FAIRCHILD

仙童半导体