丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver

文件：262.5 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon NPN Darlington Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Very high DC current gain • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Complement to type 2SB963-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

文件：303.37 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

• FEATURES • With TO-252( DPAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchin

文件：267.28 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power manageme

文件：268.5 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：250.32 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

• DESCRITION • DC-DC Converters and off-line UPS • High Voltage Synchronous Rectifier • FEATURES • Static drain-source on-resistance: RDS(on)≤36mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.54 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：320.97 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

文件：302.83 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistors

文件：277.26 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：321.24 Kbytes 页数：2 Pages

ISC

无锡固电