NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SD1286-Z is designed for Switching, especially in Hybrid Integrated Circuits. FEATURES ● High hFE : hFE =2 000 to 30 000 ● Complement to 2SB963-Z

文件：225.78 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1286-Z is designed for Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2000 to 30000 • Complement to 2SB963-Z

文件：1.85638 Mbytes 页数：6 Pages

RENESAS

瑞萨

丝印：DPAK；Package：TO-252；isc Silicon NPN Darlington Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Very high DC current gain • Monolithic darlington transistor with integrated antiparallel collector-emitter diode • Complement to type 2SB963-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

文件：303.37 Kbytes 页数：2 Pages

ISC

无锡固电

Transistor-Bipolar Power Transistors

Renesas

瑞萨