丝印：AOD409；Package：TO-252；P-Channel -60 V (D-S) MOSFET

Features VDS (V) = -60V ID = -26A (VGS = -10V) RDS(ON)

文件：489.05 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：AOD409；Package：TO-252；P-Channel -60 V (D-S) MOSFET

General Description The AOD409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO-252 package, this device is well suited for high current load applications. Features VDS (V) = -60V ID = -

文件：391.07 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

• FEATURES • With TO-252( DPAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchin

文件：267.28 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD409 is Pb-free (meets

文件：185.12 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • Material categorization: APPLICATIONS • Load Switch

文件：1.27698 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

文件：2.53267 Mbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

文件：243 Kbytes 页数：6 Pages

AOSMD

万国半导体

-60V P-Channel MOSFET

类型: P沟道 漏源电压(Vdss): 60V 连续漏极电流(Id): 50A

XBLW

芯伯乐

场效应管

HXY MOSFET

华轩阳电子

MOSFET

MTW

美台微