200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

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FAIRCHILD

仙童半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：596.55 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件：1.43474 Mbytes 页数：5 Pages

BYCHIP

百域芯

Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)

Applications ● High frequency DC-DC converters Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies ● T

文件：132.73 Kbytes 页数：10 Pages

IRF

SMPS MOSFET

Applications ● High frequency DC-DC converters Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current

文件：3.73907 Mbytes 页数：10 Pages

KERSEMI

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65

Application Load/Power SWwitching Interfacing Switching Battery Management for Ultra Small Portable Electronics Logic Level Shift

文件：1.03454 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

HEXFET Power MOSFET

Applications • High frequency DC-DC converters • Lead-Free Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current

文件：220.96 Kbytes 页数：10 Pages

IRF

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：993.24 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：3.96242 Mbytes 页数：7 Pages

KERSEMI

HEXFEP Power MOSFET

HEXFEP® Power MOSFET Vdss=200V RDS(on)=0.80Ω ID=4.8A

文件：1.85874 Mbytes 页数：11 Pages

IRF