N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件：1.43474 Mbytes 页数：5 Pages

Bychip

百域芯

Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)

Applications ● High frequency DC-DC converters Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies ● T

文件：132.73 Kbytes 页数：10 Pages

IRF

N-Channel MOSFET Transistor

文件：335.72 Kbytes 页数：2 Pages

ISC

无锡固电

SMPS MOSFET

Applications ● High frequency DC-DC converters Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current

文件：3.73907 Mbytes 页数：10 Pages

KERSEMI