IRFR224TRL说明书PDF资料贸易商威世VISHAY-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR224TRL	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：853.71 Kbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR224TRL	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37389 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR224TRLA	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37389 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR224TRLA	文件：3.37075 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37075 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR224TRLPBF	文件：853.71 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：853.71 Kbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR224TRLPBFA	文件：3.37075 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37075 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR224TRLPBFA	文件：3.37389 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37389 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR224TRLPBFA	文件：368.2 Kbytes Page：13 Pages	Power MOSFET 文件：368.2 Kbytes 页数：13 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY

详细参数

型号：
IRFR224TRL
功能描述：
MOSFET N-Chan 250V 3.8 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	IRFR224TRL	INTERNATIONA	05+	原厂原装	8267	只做全新原装真实现货供应	询价
深圳市一线半导体有限公司	IRFR224TRL	IR	24+	TO-252	36800		询价
深圳市鹏和科技有限公司	IRFR224TRL	IR	24+	TO252	5000	只做原装公司现货	询价
深圳市安富世纪电子有限公司	IRFR224TRL	IR	23+	TO252	50000	全新原装正品现货,支持订货	询价
深圳市科雨电子有限公司	IRFR224TRL	VISHAY	25+	TO-252	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	IRFR224TRL	IR	23+	TO252	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IRFR224TRL	IR	25+	TO252	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRFR224TRL	Vishay Siliconix	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原厂渠道,现货配单	询价
深圳市鹏顺微电子科技有限公司	IRFR224TRL	Vishay Siliconix	2022+	TO-252-3,DPak(2 引线 + 接片	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳庞田科技有限公司	IRFR224TRL	IR	2023+环保现货	TO-252	18000	专注军工、汽车、医疗、工业等方案配套一站式服务	询价

更多IRFR224TRL供应商更新时间2026-1-24 10:31:00

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