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IIRFR24N15D

N-ChannelMOSFETTransistor

•DESCRITION •HighSpeedPowerSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤95mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR24N15D

HEXFETPowerMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFR24N15D

HighfrequencyDC-DCconverters

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR24N15D

N-ChannelMOSFETTransistor

•DESCRITION •HighSpeedPowerSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤95mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR24N15DPBF

SMPSMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters •Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR24N15DPBF

HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFR24N15DPBF

HEXFET짰PowerMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent •Lead-Free Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU24N15D

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU24N15D

HEXFETPowerMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU24N15DPBF

HEXFET짰PowerMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent •Lead-Free Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU24N15DPBF

SMPSMOSFET

Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters •Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRFR24N15DTRRP

  • 功能描述:

    MOSFET MOSFET, 150V, 24A, 95 mOhm, 30 nC Qg, D-Pak

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2016+
TO-252
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
IR
23+
TO-252
90000
只做原装 全系列供应 价格优势 可开增票
询价
IR
21+
TO-252
50000
终端可免费提供样品,欢迎咨询
询价
IR
22+
TO-252
32350
原装正品 假一罚十 公司现货
询价
IR
23+
TO-252
50000
全新原装正品现货,支持订货
询价
IR
2022
TO-252
80000
原装现货,OEM渠道,欢迎咨询
询价
IR
21+
TO-252
56000
公司进口原装现货 批量特价支持
询价
IR
21+ROHS
TO-252
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
2023+
TO-252
3000
十五年行业诚信经营,专注全新正品
询价
IR
22+
TO-252
60620
1098
询价
更多IRFR24N15DTRRP供应商 更新时间2024-5-24 15:11:00