N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件：1.37366 Mbytes 页数：5 Pages

Bychip

百域芯

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件：1.37367 Mbytes 页数：5 Pages

Bychip

百域芯

HEXFET POWER MOSFET

文件：2.15484 Mbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：2.39965 Mbytes 页数：8 Pages

VishayVishay Siliconix

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