MJD210

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc

MJD210

Complementary Plastic Power Transistors

ComplementaryPlasticPowerTransistors NPN/PNPSiliconDPAKForSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage−VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain−hFE

MJD210

D-PAK for Surface Mount Applications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •LowCollectorEmitterSaturationVoltage •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix)

MJD210

isc Silicon PNP Power Transistor

DESCRIPTION •HighDCCurrentGain- :hFE=70(Min)@IC=-0.5A •LowCollectorSaturationVoltage- :VCE(sat)=-0.3V(Max.)@IC=-0.5A •ComplementtotheNPNMJD200 •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforlow

MJD210

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-25V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications

MJD210

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

■DESCRIPTION TheUTCMJD210isdesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. ■FEATURE *Collector-EmitterSustainingVoltage VCEO(SUS)=-25V(Min)@IC=-10mA *HighDCCurrentGain hFE=70(Min)@IC=-500mA =45(Min)@IC=-2A =10(Min)@

MJD210

Complementary Plastic Power Transistors

MJD210

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

MJD210

Complementary Plastic Power Transistors

MJD210

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：托盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 25V 5A DPAK