D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix)

文件：46.43 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Complementary Plastic Power Transistors

Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc • High DC Current Gain − hFE

文件：236.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

■ DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. ■ FEATURE * Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA * High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @

文件：164.99 Kbytes 页数：5 Pages

UTC

友顺

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

文件：236.97 Kbytes 页数：6 Pages

Motorola

摩托罗拉

isc Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A • Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A • Complement to the NPN MJD200 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low

文件：227.34 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications

文件：302.57 Kbytes 页数：3 Pages

ISC

无锡固电

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

文件：209.37 Kbytes 页数：5 Pages

UTC

友顺

Complementary Plastic Power Transistors

文件：138.05 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Plastic Power Transistors

文件：87.9 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Bipolar Transistor

The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. • Collector-Emitter Sustaining Voltage \n• High DC Current Gain \n• =45 (Min) @ IC=-2A \n• Lead Formed for Surface Mount Applications in   \n• Straight Lead Version in Plastic Sleeves (“-1” Suffix) \n• Low Collector – Emitter Saturation Voltage \n• = -0.75V (Max) @ IC = -2.0 A \n• fT = 65 MH;

UTC

友顺