MJD210分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

MJD210属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由安森美半导体制造生产的MJD210晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。

Complementary Plastic Power Transistors

NPN/PNP Silicon DPAK For Surface Mount Applications

Designed for low voltage, low−power, high−gain audio amplifier applications.

特性 Features

• Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

• High DC Current Gain − hFE = 70 (Min) @ IC= 500 mAdc

= 45 (Min) @ IC= 2 Adc

= 10 (Min) @ IC= 5 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Low Collector−Emitter Saturation Voltage −VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc

= 0.75 Vdc (Max) @ IC= 2.0 Adc

• High Current−Gain − Bandwidth Product −fT= 65 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakage −ICBO= 100 nAdc @ Rated VCB

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V

• Pb−Free Packages are Available