MJD200-1中文资料摩托罗拉数据手册PDF规格书

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

MJD200 NPN

MJD210 PNP

NPN/PNP Silicon DPAK For Surface Mount Applications

. . . designed for low voltage, low–power, high–gain audio amplifier applications.

• Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

• High DC Current Gain — hFE= 70 (Min) @ IC= 500 mAdc

= 45 (Min) @ IC= 2 Adc

= 10 (Min) @ IC= 5 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“–1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Low Collector–Emitter Saturation Voltage —VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc

= 0.75 Vdc (Max) @ IC= 2.0 Adc

• HighCurrent–Gain — Bandwidth Product — fT= 65 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakage — ICBO= 100 nAdc @ Rated VCB