MJD200T4分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

厂商型号	MJD200T4
参数属性	MJD200T4 封装/外壳为TO-252-3，DPak（2 引线 + 接片），SC-63；包装为剪切带（CT）；类别为分立半导体产品的晶体管-双极性晶体管（BJT）-单个；产品描述：TRANS PWR NPN 5A 25V DPAK
功能描述	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
封装外壳	TO-252-3，DPak（2 引线 + 接片），SC-63
文件大小	236.97 Kbytes
页面数量	6 页
生产厂商	Motorola, Inc
企业简称	MOTOROLA【摩托罗拉】
中文名称	加尔文制造公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 23:00:00
人工找货	MJD200T4价格和库存，欢迎联系客服免费人工找货

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

MJD200 NPN

MJD210 PNP

NPN/PNP Silicon DPAK For Surface Mount Applications

. . . designed for low voltage, low–power, high–gain audio amplifier applications.

• Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

• High DC Current Gain — hFE= 70 (Min) @ IC= 500 mAdc

= 45 (Min) @ IC= 2 Adc

= 10 (Min) @ IC= 5 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“–1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

• Low Collector–Emitter Saturation Voltage —VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc

= 0.75 Vdc (Max) @ IC= 2.0 Adc

• HighCurrent–Gain — Bandwidth Product — fT= 65 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakage — ICBO= 100 nAdc @ Rated VCB