Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for    External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive    Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise    Immunity • Compliant

文件：163.5 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Applications

文件：111.42 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

文件：347.47 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：191.04 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for    External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive    Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise    Immunity • Compliant

文件：163.5 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：191.04 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET짰Power MOSFET

文件：152.03 Kbytes 页数：8 Pages

IRF

SMPS MOSFET

Benefits\n● Low Gate Charge Qg results in Simple Drive Requirement\n● Improved Gate, Avalanche and Dynamicdv/dt\n   Ruggedness\n● Fully Characterized Capacitance and Avalanche Voltage\n   and Current\n● Low Trr and Soft Diode Recovery\n● High Performance Optimised Anti-parallel Diode

Infineon

英飞凌

MOS(场效应管)

Vishay

威世