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IRFPS30N60K

SMPS MOSFET

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalanch

IRF

International Rectifier

IRFPS30N60K

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFPS30N60KPBF

SMPS MOSFET

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●Lead-Free Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitan

IRF

International Rectifier

IXFA30N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFA30N60X

AdvanceTechnicalInformation

IXYS

IXYS Corporation

IXFC30N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFC30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH30N60P

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFH30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH30N60Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurr

IXYS

IXYS Corporation

详细参数

  • 型号:

    IRFPS30N60K

  • 功能描述:

    MOSFET N-Chan 600V 30 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
23+
SUPER-247
35890
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
21+
TO-247
10000
原装现货假一罚十
询价
IR
2022+
TO-247AA
12888
原厂代理 终端免费提供样品
询价
IR
23+
TO-247AA
7300
专注配单,只做原装进口现货
询价
IR
23+
TO-247AA
7300
专注配单,只做原装进口现货
询价
IR
23+
TO-247
7000
询价
IR/VISHAY
25+
TO-247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
IR
2450+
SUPER-247
6540
只做原厂原装正品终端客户免费申请样品
询价
VishayIR
24+
Super247
268
询价
更多IRFPS30N60K供应商 更新时间2025-7-24 16:55:00