Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

文件：1.84644 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR020, SiHFR020) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件：1.05947 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFETR Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniq

文件：1.71489 Mbytes 页数：9 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

文件：4.37106 Mbytes 页数：9 Pages

KERSEMI

N-Channel MOSFET uses advanced trench technology

文件：674.87 Kbytes 页数：5 Pages

DOINGTER

杜因特

isc N-Channel MOSFET Transistor

文件：321.29 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.05728 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.05728 Mbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRFR020, SiHFR020)\nAvailable in tape and reel;

Vishay

威世

HEXFETR Power MOSFET

Infineon

英飞凌