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IRFR120NPBF

Fast Switching

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件:395.05 Kbytes 页数:11 Pages

IRF

IRFR120NPBF

Surface Mount (IRFR120N) Straight Lead (IRFU120N)

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件:4.0085 Mbytes 页数:10 Pages

KERSEMI

IRFR120NPBF

ADVANCED PROCESS TECHNOLOGY

文件:396.01 Kbytes 页数:11 Pages

IRF

IRFR120NPBF

Surface Mount (IRFR120N)

文件:396.01 Kbytes 页数:11 Pages

IRF

IRFR120NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件:396.01 Kbytes 页数:11 Pages

IRF

详细参数

  • 型号:

    IRFR120NPBF

  • 功能描述:

    MOSFET 100V 1 N-CH HEXFET PWR MOSFET 210mOhms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY/威世
25+
TO252
20300
VISHAY/威世原装特价IRFR120NPBF即刻询购立享优惠#长期有货
询价
IR
23+
TO-252
6101
进口原装正品,绝无虚假,价格优惠
询价
IR
23+
D-PAK
65400
询价
IR
22+
TO-252
23650
原装正品,实单请联系
询价
IR
25+
TO252
33500
全新进口原装现货,假一罚十
询价
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
IR
17+
TO-252
6200
询价
IR
25+
TO252
40
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
Infineon
24+
NA
3000
进口原装正品优势供应
询价
更多IRFR120NPBF供应商 更新时间2026-4-18 14:14:00