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IRFR020_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR020, SiHFR020) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件:1.05947 Mbytes 页数:13 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR020PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

文件:4.37106 Mbytes 页数:9 Pages

KERSEMI

IRFR020PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

文件:1.84644 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR020TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

文件:4.37106 Mbytes 页数:9 Pages

KERSEMI

IRFR020TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

文件:1.84644 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR020TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

文件:4.37106 Mbytes 页数:9 Pages

KERSEMI

IRFR020TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. FEATU

文件:1.84644 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR020_10

Power MOSFET

文件:1.05728 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR020PBF

Power MOSFET

文件:1.05728 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR020TR

Power MOSFET

文件:1.05728 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRFR020

  • 功能描述:

    MOSFET N-Chan 60V 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO 252
161321
明嘉莱只做原装正品现货
询价
IR
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
IR
17+
TO-252
6200
询价
IR
24+
TO-3
150
询价
IR
06+
TO-252
15000
原装库存
询价
IR
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
IR
23+
TO-252
5000
原装正品,假一罚十
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IOR
25+
TO-252
2987
绝对全新原装现货供应!
询价
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
更多IRFR020供应商 更新时间2025-12-16 19:09:00