IRFR120说明书PDF资料供应代理英飞凌IRF-114ic电子网

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IRFR120	文件：56 Kbytes Page：7 Pages	8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRFR120	文件：179.46 Kbytes Page：6 Pages	HEXFET POWER MOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR120) •Str	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR120	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay
IRFR120	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120	文件：838.17 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR120,SiHFR120) •Straightlead(IRFU120,SiHFU120) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技	Vishay
IRFR120	文件：321.05 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFR120_V01	文件：838.17 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR120,SiHFR120) •Straightlead(IRFU120,SiHFU120) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9	VishayVishay Siliconix 威世科技	Vishay
IRFR1205	文件：144.52 Kbytes Page：10 Pages	Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR1205	文件：912.29 Kbytes Page：10 Pages	Ultra Low On-Resistance Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. •Ultr	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR1205PBF	文件：397.83 Kbytes Page：11 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR1205PBF	文件：4.00508 Mbytes Page：10 Pages	ULTRA LOW ON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR1205TR	文件：1.09783 Mbytes Page：7 Pages	Ultra LowOn-Resistance Features VDS(V)=55V ID=44A(VGS=10V) RDS(ON)27m(VGS=10V)	UMWUMW 友台友台半导体	UMW
IRFR1205TRPBF	文件：398.79 Kbytes Page：11 Pages	Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR120IRFR120TR	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120N	文件：152.65 Kbytes Page：10 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR120N	文件：536.66 Kbytes Page：7 Pages	The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)	UMWUMW 友台友台半导体	UMW
IRFR120NPBF	文件：395.05 Kbytes Page：11 Pages	Fast Switching VDSS=100V RDS(on)=0.21Ω ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR120NPBF	文件：4.0085 Mbytes Page：10 Pages	Surface Mount (IRFR120N) Straight Lead (IRFU120N) VDSS=100V RDS(on)=0.21Ω ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120NTR	文件：536.66 Kbytes Page：7 Pages	The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)	UMWUMW 友台友台半导体	UMW
IRFR120PBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技	Vishay

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详细参数

型号：
IRFR120
功能描述：
MOSFET N-Chan 100V 7.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IRFR120	IR	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市科恒伟业电子有限公司	IRFR120	IR	22+	TO252	9850	只做原装正品假一赔十!正规渠道订货!	询价
深圳市富利微电子科技有限公司	IRFR120	IR	23+	TO252	33500	全新进口原装现货,假一罚十	询价
深圳市高捷芯城科技有限公司	IRFR120	onsemi(安森美)	23+	TO-252	7793	支持大陆交货,美金交易。原装现货库存。	询价
深圳市明嘉莱科技有限公司	IRFR120	IR	24+	TO 252	160865	明嘉莱只做原装正品现货	询价
深圳市锦喆鸿电子有限公司	IRFR120	IR	20+	TO-252	9600	原装正品，价格优势量大可定	询价
深圳市星佑电子有限公司	IRFR120	IR	06+	TO-252	15000	原装	询价
鑫勃源（上海北京青岛）有限公司	IRFR120	IR	23+	TO-252	18000		询价
深圳市特顺芯科技有限公司	IRFR120	IR	07+	TO-252	451685		询价
深圳市昌和盛利电子有限公司	IRFR120	IR	23+	TO-252	35890		询价

更多IRFR120供应商更新时间2024-5-15 15:30:00

详细参数

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