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IRFR024

丝印:IRFR024;Package:TO252-2L;N-Channel Enhancement Mode MOSFET

Description The IRFR024NT uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =30 A RDS(ON)

文件:853.58 Kbytes 页数:5 Pages

EVVOSEMI

翊欧

IRFR024

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:4.50222 Mbytes 页数:7 Pages

KERSEMI

IRFR024

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:1.98595 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世

IRFR024

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR024, SiHFR024) • Straight lead (IRFU024, SiHFU024) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

文件:1.06651 Mbytes 页数:13 Pages

VishayVishay Siliconix

威世

IRFR024

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier provide the designed with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件:172.77 Kbytes 页数:6 Pages

IRF

IRFR024

isc N-Channel MOSFET Transistor

文件:321.1 Kbytes 页数:2 Pages

ISC

无锡固电

IRFR024

Power MOSFET

文件:1.04466 Mbytes 页数:11 Pages

VishayVishay Siliconix

威世

IRFR024

Power MOSFET

文件:1.16522 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世

IRFR024

Power MOSFET

文件:1.16522 Mbytes 页数:10 Pages

VishayVishay Siliconix

威世

IRFR024

Power MOSFET

Dynamic dV/dt rating\nSurface-mount (IRFR024, SiHFR024)\nStraight lead (IRFU024, SiHFU024);

Vishay

威世

技术参数

  • OPN:

    IRFR024NTRLPBF/IRFR024NTRPBF

  • Qualification:

    Non-Automotive

  • Package name:

    DPAK/DPAK

  • VDS max:

    55 V

  • RDS (on) @10V max:

    75 mΩ/75 mΩ

  • ID @25°C max:

    17 A/17 A

  • QG typ @10V:

    13.3 nC/13.3 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V/2 V

  • VGS(th) max:

    4 V/4 V

  • VGS(th):

    3 V/3 V

  • Technology:

    IR MOSFET™/IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
最新
1000
原装正品现货
询价
IR
24+
TO-252
500862
免费送样原盒原包现货一手渠道联系
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
24+
TO-252
1000
询价
IR
24+/25+
2590
原装正品现货库存价优
询价
IR
2015+
TO-252
19889
一级代理原装现货,特价热卖!
询价
IR
05+
TO-252
15000
原装进口
询价
IR
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
IR
24+
原厂封装
3488
原装现货假一罚十
询价
IR
25+
TO-252
700
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多IRFR024供应商 更新时间2025-10-11 17:25:00