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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR024R	文件：4.50222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR024TR	文件：4.50222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR024TR	文件：1.98595 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.98595 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR024TRL	文件：1.98595 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.98595 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR024TRL	文件：4.50222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR024TRPBF	文件：4.50222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.50222 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR024TRPBF	文件：1.98595 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.98595 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR024_10	文件：1.16522 Mbytes Page：10 Pages	Power MOSFET 文件：1.16522 Mbytes 页数：10 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR024_17	文件：1.04466 Mbytes Page：11 Pages	Power MOSFET 文件：1.04466 Mbytes 页数：11 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFR024A	文件：320.88 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：320.88 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

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技术参数

OPN：
IRFR024NTRLPBF/IRFR024NTRPBF
Qualification：
Non-Automotive
Package name：
DPAK/DPAK
VDS max：
55 V
RDS (on) @10V max：
75 mΩ/75 mΩ
ID @25°C max：
17 A/17 A
QG typ @10V：
13.3 nC/13.3 nC
Polarity：
N
VGS(th) min：
2 V/2 V
VGS(th) max：
4 V/4 V
VGS(th)：
3 V/3 V
Technology：
IR MOSFET™/IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
君宇国际实业有限公司	IRFR024	IR		最新	1000	原装正品现货	询价
柒号芯城电子商务(深圳)有限公司	IRFR024	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市一线半导体有限公司	IRFR024	IR	24+	TO-252	1000		询价
深圳市联世界科技有限公司	IRFR024	IR	24+/25+		2590	原装正品现货库存价优	询价
深圳市福田区绿盛电子商行	IRFR024	IR	2015+	TO-252	19889	一级代理原装现货,特价热卖!	询价
芯有半导体（深圳）有限公司	IRFR024	IR	05+	TO-252	15000	原装进口	询价
深圳市勤思达科技有限公司	IRFR024	IR	12+	TO-252	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市弘为电子有限公司	IRFR024	IR	24+	原厂封装	3488	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	IRFR024	IR	25+	TO-252	700	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市鹏和科技有限公司	IRFR024	IR	24+	TO-252	5000	全现原装公司现货	询价

更多IRFR024供应商更新时间2026-1-25 9:04:00

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