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IRFR024N

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRFR024N

Ultra Low On-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFR024NPBF

Ultra Low On-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024NTR

The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues.

Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IRFR024NTR

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRFR024PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFR024PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024R

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024TR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRFR024

  • 功能描述:

    MOSFET N-Chan 60V 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
23+
SOT-252
20529
专注原装正品现货特价中量大可定
询价
IR
最新
1000
原装正品现货
询价
IR
24+
TO-252
500862
免费送样原盒原包现货一手渠道联系
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
24+
TO-252
1000
询价
IR
24+/25+
2590
原装正品现货库存价优
询价
IR
2015+
TO-252
19889
一级代理原装现货,特价热卖!
询价
IR
05+
TO-252
15000
原装进口
询价
IR
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
IR
24+
原厂封装
3488
原装现货假一罚十
询价
更多IRFR024供应商 更新时间2025-7-21 16:42:00