HEXFET POWER MOSFET

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Surface-mount (IRFR024, SiHFR024) • Straight lead (IRFU024, SiHFU024) • Available in tape and reel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99

文件：1.06651 Mbytes 页数：13 Pages

VishayVishay Siliconix

威世

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

文件：942.95 Kbytes 页数：10 Pages

KERSEMI

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

文件：466.35 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：4.03053 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：401.32 Kbytes 页数：10 Pages

IRF

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

文件：466.35 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues.

Features VDS (V) = 55V ID = 17A (VGS = 10V) RDS(ON) =75mW (VGS = 10V)

文件：537.48 Kbytes 页数：7 Pages

UMW

友台半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.50222 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.98595 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世