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IRFR024NPBF中文资料IRF数据手册PDF规格书
IRFR024NPBF规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
• Ultra Low On-Resistance
• Surface Mount (IRFR024N)
• Straight Lead (IRFU024N)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
产品属性
- 型号：
IRFR024NPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 75mOhms 13.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
IR |
2026+ |
TO-252 |
65248 |
百分百原装现货 实单必成 |
询价 | ||
INFINEON/英飞凌 |
25+ |
TO252 |
32360 |
INFINEON/英飞凌全新特价IRFR024NPBF即刻询购立享优惠#长期有货 |
询价 | ||
IOR |
10+ |
TO-252 |
262 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
25+ |
D-Pak |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
IR |
23+ |
D-PAK |
65400 |
询价 | |||
IR |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
询价 | ||
IR |
2450+ |
TO252 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
询价 | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
26+ |
SOT-252 |
18689 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 |
