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IRFR1010ZTRPBF

Advanced Process Technology

文件:334.4 Kbytes 页数:11 Pages

IRF

IRFR1010ZTRPBF-TP

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

文件:2.03253 Mbytes 页数:4 Pages

TECHPUBLIC

台舟电子

IRFR1010ZTRR

Advanced Process Technology

文件:4.60477 Mbytes 页数:11 Pages

KERSEMI

IRFRSLASHU1010Z

Advanced Process Technology

Description Specifically designed for Automotive applications, this MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetiti

文件:4.28522 Mbytes 页数:11 Pages

KERSEMI

IRFU1010Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

文件:292.8 Kbytes 页数:11 Pages

IRF

详细参数

  • 型号:

    IRFR1010ZTRPBF

  • 功能描述:

    MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-252
22000
全新原装正品 现货库存 价格优势
询价
INFINEON/IR
1907+
NA
2000
20年老字号,原装优势长期供货
询价
INFINEON/英飞凌
25+
TO-252
32000
INFINEON/英飞凌全新特价IRFR1010ZTRPBF即刻询购立享优惠#长期有货
询价
IR
16+
TO-252
36000
原装正品,优势库存81
询价
INFINEON/英飞凌
24+
TO-252
160066
明嘉莱只做原装正品现货
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
Infineon(英飞凌)
23+
25650
新到现货,只做原装进口
询价
IR
24+
TO-252
6000
原装现货假一罚十
询价
Infineon(英飞凌)
25+
DPAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。
询价
Infineon(英飞凌)
25+
DPAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。
询价
更多IRFR1010ZTRPBF供应商 更新时间2026-2-9 9:03:00