Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：112.95 Kbytes 页数：10 Pages

IRF

Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A⑤)

Infineon

英飞凌

Industrial RS-422/485 repeater

文件：1.01441 Mbytes 页数：3 Pages

ORING

唯栎电子

Industrial RS-422/485 repeater

文件：1.01441 Mbytes 页数：3 Pages

ORING

唯栎电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=18A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V DESCRIPTION ·Switch Mode Power Supply(SMPS) ·Uninterruptible Power Supply(UPS)

文件：296.25 Kbytes 页数：2 Pages

ISC

无锡固电