Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：144.52 Kbytes 页数：10 Pages

IRF

Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. • Ultr

文件：912.29 Kbytes 页数：10 Pages

KERSEMI

MOSFET

Features VDS (V) = 55V ID= 44A (VGS=10V) RDS(ON)

文件：1.14541 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel MOSFET Transistor

文件：334.65 Kbytes 页数：2 Pages

ISC

无锡固电

采用 D-Pak 封装的 55V 单 N 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：4.00508 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：397.83 Kbytes 页数：11 Pages

IRF

丝印：FR1205；Package：TO-252；MOSFET

Features VDS (V) = 55V ID= 44A (VGS=10V) RDS(ON)

文件：1.14541 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：FR1205；Package：TO-252；Ultra LowOn-Resistance

Features VDS (V) = 55V ID= 44A (VGS=10V) RDS(ON) 27m (VGS = 10V)

文件：1.09783 Mbytes 页数：7 Pages

UMW

友台半导体

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：398.79 Kbytes 页数：11 Pages

IRF