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IRFR1205PBF中文资料PDF规格书
IRFR1205PBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
• Ultra Low On-Resistance
• Surface Mount (IRFR1205)
• Straight Lead (IRFU1205)
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
产品属性
- 型号：
IRFR1205PBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
24+ |
TO-252 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
ir |
dc08 |
原厂封装 |
55 |
INSTOCK:75/tube/dpak |
询价 | ||
IR |
2016+ |
TO-252 |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
ir |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
IR |
22+ |
TO-252 |
4500 |
全新原装品牌专营 |
询价 | ||
IR |
23+ |
NA/ |
1488 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
23+ |
D2PAK |
7750 |
全新原装优势 |
询价 | ||
IR |
20+ |
DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 |
