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IRFR13N20

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件:181.69 Kbytes 页数:10 Pages

IRF

IRFR13N20

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Infineon

英飞凌

IRFR13N20D

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件:181.69 Kbytes 页数:10 Pages

IRF

IRFR13N20DPBF

SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235廓 , ID=13A )

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free

文件:688.93 Kbytes 页数:11 Pages

IRF

IRFR13N20DPBF

SMPS MOSFET

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free

文件:4.32081 Mbytes 页数:10 Pages

KERSEMI

IRFR13N20D

SMPS MOSFET

文件:3.72818 Mbytes 页数:10 Pages

KERSEMI

IRFR13N20D

N-Channel MOSFET Transistor

文件:335.82 Kbytes 页数:2 Pages

ISC

无锡固电

IRFR13N20DPBF

HIGH FREQUENCY DC-DC CONVERTERS

文件:689.89 Kbytes 页数:11 Pages

IRF

IRFR13N20DPBF

High frequency DC-DC converters

文件:689.89 Kbytes 页数:11 Pages

IRF

IRFR13N20DPBF_15

HIGH FREQUENCY DC-DC CONVERTERS

文件:689.89 Kbytes 页数:11 Pages

IRF

技术参数

  • Package :

    DPAK (TO-252)

  • VDS max:

    200.0V

  • RDS (on)(@10V) max:

    235.0mΩ

  • RDS (on) max:

    235.0mΩ

  • Polarity :

    N

  • ID  max:

    9.5A

  • ID (@ TC=100°C) max:

    9.5A

  • ID (@ TC=25°C) max:

    14.0A

  • Ptot max:

    110.0W

  • QG :

    25.0nC 

  • Mounting :

    SMD

  • Qgd :

    12.0nC 

  • Tj max:

    175.0°C

  • VGS max:

    30.0V

  • Moisture Sensitivity Level :

    1

  • RthJC max:

    1.4K/W

供应商型号品牌批号封装库存备注价格
VB
25+
TO-252
10000
原装现货假一罚十
询价
IR
22+
TO-252
6000
终端可免费供样,支持BOM配单
询价
IR
2023+环保现货
TO-252
10000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
VB
23+
TO-252
8000
只做原装现货
询价
VB
23+
TO-252
7000
询价
I
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
IR
26+
TO-252
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
IR
24+
TO-252
7500
询价
IR
17+
TO-252
6200
100%原装正品现货
询价
IR
16+
NA
8800
原装现货,货真价优
询价
更多IRFR13N20供应商 更新时间2026-1-28 10:11:00