HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：152.65 Kbytes 页数：10 Pages

IRF

The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.

Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

文件：536.66 Kbytes 页数：7 Pages

UMW

友台半导体

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

文件：466.21 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel MOSFET Transistor

文件：335.39 Kbytes 页数：2 Pages

ISC

无锡固电

Surface Mount (IRFR120N) Straight Lead (IRFU120N)

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件：4.0085 Mbytes 页数：10 Pages

KERSEMI

Fast Switching

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

文件：395.05 Kbytes 页数：11 Pages

IRF

N-Channel 100-V (D-S) MOSFET

Features @ Ros = 100m @VGS=10V ® Super high density cell design for extremely low RDS(ON) ® Exceptional on-resistance and maximum DC current

文件：2.64174 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

文件：466.21 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.

Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

文件：536.66 Kbytes 页数：7 Pages

UMW

友台半导体

Surface Mount (IRFR120N)

文件：396.01 Kbytes 页数：11 Pages

IRF