IRFR120N中文资料IRF数据手册PDF规格书
IRFR120N规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Surface Mount (IRFR120N)
● Straight Lead (IRFU120N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
产品属性
- 型号：
IRFR120N
- 制造商：
International Rectifier
- 功能描述：
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak(TO-252AA);PD 48W
- 功能描述：
TRANS MOSFET N-CH 100V 9.4A 3PIN DPAK - Rail/Tube
- 功能描述：
MOSFET N D-PAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-252 |
996880 |
只做原装,欢迎来电资询 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
INFINEON/英飞凌 |
2511 |
TO252-3 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
IR |
24+ |
TO 252 |
160866 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
24+/25+ |
3000 |
原装正品现货库存价优 |
询价 | |||
Infineon |
23+ |
DPAK |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
IR |
0044+ |
TO-252 |
14 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
1948+ |
TO-252 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
24+ |
TO252 |
1000 |
大批量供应优势库存热卖 |
询价 | ||
INTERRECT |
23+ |
NA |
5882 |
专做原装正品,假一罚百! |
询价 |
