IRFR120N-TP

N-Channel 100-V (D-S) MOSFET

Features @Ros=100m@VGS=10V ®SuperhighdensitycelldesignforextremelylowRDS(ON) ®Exceptionalon-resistanceandmaximumDCcurrent

IRFR120NTR

TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques.

Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

IRFR120NTR

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemount applications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

IRFR120NTRPBF

N-Channel100V(D-S)MOSFET

IRFR120NTRRPBF

UltraLowOn-Resistance

IRFR120PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.27廓,ID=7.7A)

IRFR120PBF

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

IRFR120PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

IRFR120PBF

PowerMOSFET

IRFR120TR

HEXFETPOWERMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR120) •Str