IRFU1010Z中文资料PDF规格书
IRFU1010Z规格书详情
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
产品属性
- 型号:
IRFU1010Z
- 功能描述:
MOSFET N-CH 55V 42A I-PAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
23+ |
TO-251 |
10065 |
原装正品,有挂有货,假一赔十 |
询价 | ||
IR |
07+/08+ |
TO-251 |
407 |
询价 | |||
IR/VISHAY |
23+ |
TO-251 |
10000 |
公司只做原装正品 |
询价 | ||
IR |
2022 |
TO-251 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-251-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
21+ |
TO-251 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
21+ |
TO-251 |
100 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
IR |
23+ |
TO-251 |
35890 |
询价 |