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IRFPS38N60L

SMPS MOSFET

FeaturesandBenefits ●SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ●LowerGateChargeResultsinSimpleDriveRequirements ●EnhanceddV/dtcapabilitiesofferimprovedruggedness ●HigherGatevoltagethresholdoffersimprovednoiseimmunity Applications

IRF

International Rectifier

IRFPS38N60L

Lower Gate Charge Results in Simple Drive Requirements

FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •ComplianttoRoHSDirec

VishayVishay Siliconix

威世科技威世科技半导体

IRFPS38N60LPBF.

SMPS MOSFET

FeaturesandBenefits ●SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ●LowerGateChargeResultsinSimpleDriveRequirements ●EnhanceddV/dtcapabilitiesofferimprovedruggedness ●HigherGatevoltagethresholdoffersimprovednoiseimmunity Applications

IRF

International Rectifier

IRFPS38N60LPBF

HEXFET Power MOSFET

IRF

International Rectifier

IXGH38N60

Ultra-LowVCE(sat)IGBT

IXYS

IXYS Corporation

SiHFPS38N60L

LowerGateChargeResultsinSimpleDriveRequirements

FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimpleDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •ComplianttoRoHSDirec

VishayVishay Siliconix

威世科技威世科技半导体

SIHP38N60E

Reducedswitchingandconductionlosses

VishayVishay Siliconix

威世科技威世科技半导体

SIHP38N60EF

EFSeriesPowerMOSFETWithFastBodyDiode

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世科技威世科技半导体

STE38N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE

HIGHCURRENTPOWERMODULE ■AVALANCHERUGGEDTECHNOLOGY (SEESTH12N60FORRATING) ■VERYLARGESOA-LARGEPEAKPOWER CAPABILITY ■EASYTOMOUNT ■SAMECURRENTCAPABILITYFORTHE TWOSOURCETERMINALS ■EXTREMELYLOWRthJUNCTIONTOCASE ■VERYLOWDRAINTOCASECAPACITANCE ■VERYLOWINT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

SW38N60K

N-channelEnhancedmodeTO-247MOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

详细参数

  • 型号:

    IRFPS38N60L

  • 功能描述:

    MOSFET N-Chan 600V 38 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
23+
SUPER-247
35890
询价
IR
24+
原厂封装
331
原装现货假一罚十
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR/VISH
24+
65230
询价
VISHAY
1503+
SUPER-247
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-247
50000
全新原装正品现货,支持订货
询价
IR
21+
TO247
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
TO274AA
9000
原厂渠道,现货配单
询价
Vishay Siliconix
23+
TO274AA
9000
原装正品,支持实单
询价
IR
2023+
TO-247
8635
全新原装正品,优势价格
询价
更多IRFPS38N60L供应商 更新时间2025-7-20 17:22:00