Lower Gate Charge Results in Simple Drive Requirements

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Compliant to RoHS Direc

文件：190.7 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世

SMPS MOSFET

Features and Benefits ● SuperFast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate Charge Results in Simple Drive Requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate voltage threshold offers improved noise immunity Applications

文件：175.49 Kbytes 页数：9 Pages

IRF

SMPS MOSFET

Features and Benefits ● SuperFast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate Charge Results in Simple Drive Requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate voltage threshold offers improved noise immunity Applications

文件：175.49 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

文件：200.08 Kbytes 页数：9 Pages

IRF

SMPS MOSFET

Infineon

英飞凌

Power MOSFET

Vishay

威世

MOSFET MOSFET N-CHANNEL 600V

Vishay

威世