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零件编号	下载&订购	功能描述	制造商&上传企业
IRFR014	文件：172.07 Kbytes Page：6 Pages	Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFR014	文件：287.41 Kbytes Page：5 Pages	N-CHANNEL POWER MOSFET	SamsungSamsung Group 三星三星半导体
IRFR014	文件：1.768 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技
IRFR014	文件：4.2849 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.
IRFR014	文件：892.51 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Surface-mount(IRFR014,SiHFR014) •Straightlead(IRFU014,SiHFU014) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99	VishayVishay Siliconix 威世科技
IRFR014	文件：321.17 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRFR014	文件：1.92902 Mbytes Page：10 Pages	Power MOSFET	VishayVishay Siliconix 威世科技
IRFR014	文件：1.92902 Mbytes Page：10 Pages	Power MOSFET	VishayVishay Siliconix 威世科技
IRFR014_V01	文件：892.51 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Surface-mount(IRFR014,SiHFR014) •Straightlead(IRFU014,SiHFU014) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99	VishayVishay Siliconix 威世科技
IRFR014A	文件：218.75 Kbytes Page：7 Pages	ADVANCED POWER MOSFET FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=60V ♦LowerRDS(ON):0.097Ω(Typ.)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
IRFR014PBF	文件：2.0989 Mbytes Page：10 Pages	HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFR014PBF	文件：1.768 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技
IRFR014PBF	文件：4.2849 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.
IRFR014TR	文件：1.768 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技
IRFR014TR	文件：4.2849 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.
IRFR014TRL	文件：1.768 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技
IRFR014TRL	文件：4.2849 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.
IRFR014TRLPBF	文件：1.768 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技
IRFR014TRLPBF	文件：4.2849 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.
IRFR014TRPBF	文件：1.768 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技

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详细参数

型号：
IRFR014
功能描述：
MOSFET N-Chan 60V 7.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市亚泰盈科电子有限公司	IRFR014	IR/VISHAY		SOT252	30216	提供BOM表配单TEL:0755-83759919QQ:2355705587杜S	询价
深圳市纳艾斯科技有限公司	IRFR014	IR	2020+	TO-252	8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市宏捷佳电子科技有限公司	IRFR014	IR/VISHAY	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市珩瑞科技有限公司	IRFR014	IR	21+	TO-252	6000	原装正品	询价
深圳市创新迹电子有限公司	IRFR014	IR	2021+	TO-252	9000	原装现货,随时欢迎询价	询价
深圳市勤思达科技有限公司	IRFR014	IR	2015+	D-Pak	12500	全新原装,现货库存长期供应	询价
深圳市特顺芯科技有限公司	IRFR014	IR	2008++	TO-252	51200	新进库存/原装	询价
深圳市莱克讯科技有限公司	IRFR014	IR	2017+	TO252	35689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市星佑电子有限公司	IRFR014	IR	06+	TO-252	15000	原装	询价
深圳好佳好科技有限公司	IRFR014	IR	1436+	TO-252	30000	绝对原装进口现货可开增值税发票	询价

更多IRFR014供应商更新时间2024-4-27 14:00:00

详细参数

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