Power MOSFET

文件：892.51 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世

Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni

文件：172.07 Kbytes 页数：6 Pages

IRF

N-CHANNEL POWER MOSFET

文件：287.41 Kbytes 页数：5 Pages

Samsung

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.768 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世