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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFPC60	文件：2.44277 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude 文件：2.44277 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFPC60	文件：162.21 Kbytes Page：6 Pages	Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S 文件：162.21 Kbytes 页数：6 Pages	IRF	IRF
IRFPC60	文件：2.46072 Mbytes Page：11 Pages	Power MOSFET 文件：2.46072 Mbytes 页数：11 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFPC60LC	文件：343.43 Kbytes Page：8 Pages	Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A) Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：343.43 Kbytes 页数：8 Pages	IRF	IRF
IRFPC60LC	文件：640.07 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：640.07 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFPC60LC-P	文件：110.13 Kbytes Page：8 Pages	HEXFET Power MOSFET Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total 文件：110.13 Kbytes 页数：8 Pages	IRF	IRF
IRFPC60LCPBF	文件：640.07 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The 文件：640.07 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFPC60PBF	文件：2.44277 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude 文件：2.44277 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFPC60_V01	文件：2.46072 Mbytes Page：11 Pages	Power MOSFET 文件：2.46072 Mbytes 页数：11 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFPC60LC	文件：689.15 Kbytes Page：11 Pages	Power MOSFET 文件：689.15 Kbytes 页数：11 Pages	VishayVishay Siliconix 威世科技	Vishay

技术参数

漏源电压（Vdss）：
600V
栅源极阈值电压（最大值）：
4V @ 250uA
漏源导通电阻（最大值）：
400 mΩ @ 9.6A，10V
类型：
N 沟道
功率耗散（最大值）：
280W

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	IRFPC60	IR	24+	TO-247	3520	只做原厂渠道可追溯货源	询价
深圳市明嘉莱科技有限公司	IRFPC60	IR	24+	TO 3P	161279	明嘉莱只做原装正品现货	询价
深圳市科恒伟业电子有限公司	IRFPC60	IR	2450+	TO-247	9850	只做原装正品现货或订货假一赔十!	询价
深圳市一线半导体有限公司	IRFPC60	IR	24+	TO-247AC	8866		询价
谛辉(北京/上海/青岛 )电子科技有限公司	IRFPC60	IR	25+	TO-3P	18000	原厂直接发货进口原装	询价
深圳市福田区绿盛电子商行	IRFPC60	IR	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市卓越微芯电子有限公司	IRFPC60	IR	25+	TO247	18600	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市星佑电子有限公司	IRFPC60	IR	06+	TO-247	1000	自己公司全新库存绝对有货	询价
深圳市勤思达科技有限公司	IRFPC60	IR	2015+	TO-247AC	12500	全新原装,现货库存长期供应	询价
深圳市弘为电子有限公司	IRFPC60	IR	24+	原厂封装	1217	原装现货假一罚十	询价

更多IRFPC60供应商更新时间2025-10-5 16:36:00

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