25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor designed for applications such as switching regulators, switching c

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25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor designed for applications such as switching regulators,\nswitching conve • 25A, 100V\n•rDS(ON)= 0.150Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance;

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