IRFP9230

P-CHANNEL POWER MOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRFP9230

P-CHANNEL POWER MOSFETS;

IRFY9230

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

IRH9230

SimpleDriveRequirements

IRH9230

TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.8ohm,Id=-6.5A)

200Volt,0.8Ω,RADHARDHEXFET InternationalRectifier’sP-ChannelRADHARDtechnologyHEXFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiationdosesashighas105Rads(Si).Underidenticalpre-andpost-radiationtestconditions,Internationa

IRHE9230

SimpleDriveRequirements

IRHE9230

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(LCC-18)

IRHF9230

RADIATIONHARDENEDPOWERMOSFET

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-39) 200V,P-CHANNEL InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.These

IRHF9230

SimpleDriveRequirements

IRHM9230

SimpleDriveRequirements