P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

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Samsung

三星

P-CHANNEL POWER MOSFETS

Samsung

三星

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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SEME-LAB

TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

200 Volt, 0.8Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identicalpre- and post-radiation test conditions, Internationa

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IRF

Simple Drive Requirements

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IRF