P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

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P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

文件：381.33 Kbytes 页数：6 Pages

SAMSUNG

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P-CHANNEL POWER MOSFETS

FEATURES Low RDS(on) PACKAGE STYLE Package Type Part Number Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Extended safe operating area Improved high temperature reliability

文件：210.09 Kbytes 页数：5 Pages

SAMSUNG

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -15A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：314.36 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：273.13 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFETS

Samsung

三星