Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

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VishayVishay Siliconix

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Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

文件：164.56 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Su

文件：95.8 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch

文件：893.51 Kbytes 页数：8 Pages

VishayVishay Siliconix

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Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：225.15 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：225.15 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch

文件：893.51 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Thes

文件：583.95 Kbytes 页数：8 Pages

VishayVishay Siliconix

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Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

文件：333.89 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rating • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/d

文件：643.8 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世科技