Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power level

文件：174.81 Kbytes 页数：8 Pages

IRF

Dynamic dv/dt Rating, Repetitive Avalanche Rated, Isolated Central Mounting Hole, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead

文件：881.77 Kbytes 页数：7 Pages

IRF

20A,500V Heatsink N-Channel Type Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3P

文件：1.27629 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

文件：135.66 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：203.58 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 500V (D-S) Super Junction Power MOSFET

文件：1.96169 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

Infineon

英飞凌