N-Channel Enhancement Mode MegaMOS FET

MegaMOS™FET N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● High commutating dv/dt rating ● Fast switching times Applications ● Switch-mode and resonant-mode power supplies ● Motor controls ●

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

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PANASONIC

松下

Silicon NPN Transistor RF Power Output

Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: • Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficie

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NTE

VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER

Very Low Noise Quad Operational Amplifier

文件：587.7 Kbytes 页数：15 Pages

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