首页 >IRFP23N50LPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRFP23N50LPBF | Power MOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技 |  | |
IRFP23N50LPBF | HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190廓 , Trr typ. = 170ns , ID = 23A ) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFP23N50LPBF | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技 | | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | |
详细参数
- 型号：
IRFP23N50LPBF
- 功能描述：
MOSFET N-Chan 500V 23 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
23+ |
TO-247AC |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY/威世 |
21+ |
NA |
8000 |
只做原装,假一罚十 |
询价 | ||
VISHAY |
2021 |
TO-247 |
3000 |
全新原装公司现货
|
询价 | ||
VISHAY |
21+ |
TO-247-3 |
4000 |
原装正品 有挂有货 |
询价 | ||
VISHAY |
14+/21+ |
50 |
TO-247-3 |
询价 | |||
VISHAY |
21+ |
TO-247 |
8080 |
只有原装,支持实单 |
询价 | ||
VISHAY |
21+ |
TO-247 |
10080 |
原装,诚信经营 |
询价 | ||
VISHAY |
2339+ |
TO-247 |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 | ||
VISHAY |
2021 |
TO-247 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
22+ |
TO-247 |
8135 |
原装正品，实单请联系 |
询价 |
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