N-CHANNEL POWER MOSFETS

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SAMSUNG

三星

14A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：55.81 Kbytes 页数：7 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude t

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VISHAYVishay Siliconix

威世威世科技公司

Standard Power MOSFET - N-Channel Enhancement Mode

N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (

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IXYS

艾赛斯

Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)

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IRF

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 14A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • Fast Switching

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ISC

无锡固电

14A, 500V, 0.400 Ohm, N-Channel Power MOSFET

Features • 14A, 500V • r DS(ON) = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC

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SYC

N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH??MOSFET

DESCRIPTION This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY1 process. This technology matches and improves the performances compared with standard parts from various sources. . TYPICAL RDS(on)= 0.33 Ω . EXTREMELY HIGH dv/dt CAPABILITY . 100 AVALANC

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.33 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALA

文件：90.99 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL PowerMESH MOSFET

文件：410.95 Kbytes 页数：7 Pages

ARTSCHIP